Analysis of carrier transport properties in GaN/Al0.3Ga0.7N multiple quantum well nanostructures

Analysis of carrier transport properties in GaN based multiple quantum well nanostructure has been carried out with an applied bias. Effect of an applied bias and aluminium mole composition in the barrier on the scattering rate, capture time and escape rate has been investigated. The scattering rate was found to be decreased with an increase of applied bias voltage and aluminium mole composition. Capture time shows oscillatory nature with variations in mole composition of aluminium under biasing conditions. The escape rate was found to be increasing from 0.01 ps⁻¹ to 0.69 ps⁻¹ with applied bias voltage.