Electron-beam poling in undoped, N- or Ge-doped MDECR H:SiO2 films |
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| Authors: | Q. Liu B. Poumellec C. Haut D. Dragoe R. Blum G. Girard J.-E. Bourée A. Kudlinski Y. Quiquempois G. Blaise |
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| Affiliation: | (1) Laboratoire de Physico-Chimie de l’Etat Solide, UMR CNRS-UPS 8648, Université de Paris Sud, Bât. 414, 91405 Orsay Cedex, France;(2) Laboratoire de Physique des interfaces et des couches minces, UMR CNRS-EP 7647, Ecole polytechnique, 91128 Palaiseau, France;(3) Laboratoire de Physique des Lasers, Atomes et Molécules, UMR CNRS-USTL 8523, Université des Sciences et Technologies de Lille, Bât. P5, 59655 Villeneuve d’Ascq Cedex, France;(4) Laboratoire de Physique des Solides, UMR CNRS-UPS 8502, Université de Paris Sud, Bât. 510, 91405 Orsay Cedex, France |
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| Abstract: | Amorphous N- or Ge-doped H:SiO2 films deposited on silica by the matrix distributed electron cyclotron resonance-PECVD method were irradiated by an electron-beam with different doses in order to pole the material and induce second harmonic generation (SHG). SHG was measured using the Maker-fringe method. When irradiated at an acceleration voltage of 25 kV, an incident current of 5 nA during 480 s, the N-doped H:SiO2 films exhibited a maximum second harmonic signal in the order of 0.003 pm/V, but when irradiated with an acceleration voltage of 30 kV, at 5 nA during 240 s, the films exhibited a maximum second harmonic signal of 0.006 pm/V. With a smaller current of 0.5 nA during 25 s and 25 kV acceleration voltage, the Ge-doped H:SiO2 films (3.8 at. % Ge) showed a maximum second-order nonlinearity of 0.0005 pm/V. But an H:SiO2 films with a smaller Ge content (1.0 at. % Ge), showed a large SHG: d33=0.09 pm/V when irradiated at 25 kV, 0.5 nA during 15 s. PACS 78.66.J; 42.65.K; 68.60.D |
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