| 磷离子注入对部分耗尽SOI MOS总剂量背栅效应的影响 |
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| 引用本文： | 李蕾蕾,周昕杰,于宗光,封晴.磷离子注入对部分耗尽SOI MOS总剂量背栅效应的影响[J].半导体学报,2015,36(1):014006-4. |
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| 作者姓名： | 李蕾蕾 周昕杰 于宗光 封晴 |
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| 基金项目： | SOI研发中心基金（20106250xxx） |
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| 摘 要： | 本文研究了背栅磷离子注入加固技术对部分耗尽绝缘体上硅（silicon-on-insulator, SOI）MOS器件抗总剂量辐射性能提升的机理。认为可以对背栅沟道处进行磷离子注入，改变界面处的离子浓度分布，通过引入电子陷阱，抵消背栅界面陷阱俘获正电荷，从而改善背栅效应，提高器件的抗辐射性能。通过用高浓度磷离子对部分耗尽SOI NMOS器件背栅进行离子注入，大大减小了器件的背栅效应，实验器件的抗辐射能力能够达到1M rad（Si）。
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| 关 键 词： | back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect |
Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation |
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| Li Leilei,Zhou Xinjie,Yu Zongguang and Feng Qing.Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation[J].Chinese Journal of Semiconductors,2015,36(1):014006-4. |
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| Authors: | Li Leilei Zhou Xinjie Yu Zongguang and Feng Qing |
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| Institution: | 1. School of Microelectronics, Xidian University, Xi'an 710071, China;The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China;2. The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China |
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| Abstract: | The mechanism of improving the TID radiation hardened ability of partially depleted silicon-on-insulator (SOI) devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in SiO2 near back SiO2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad(Si) for experimental devices. |
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| Keywords: | back gate phosphorus ions implantation total-dose radiation SOI MOS back-gate effect |
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