Coulomb blockade under conditions of inelastic tunneling |
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| Authors: | L V Litvin V A Kolosanov D G Baksheev V A Tkachenko A L Aseev |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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| Abstract: | It is found that single-electron current oscillations in the drain-gate characteristics of a single-electron transistor fabricated by the step-edge cutoff process, as compared to a conventional single-electron transistor, are damped several times slower and do not change their phase by π as the source-drain voltage increases. This is explained by the strong nonlinearity of the current-voltage characteristics of tunnel junctions, which is caused by the inelastic character of tunneling. |
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