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Decomposition of silane on solid P4O10
Authors:B S Suresh  D K Padma
Institution:

Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore 560 012, India

Abstract:Silane undergoes thermal decomposition on the surface of “phosphorus pentoxide” ( P4O10) into its elements around 200–400°C. The hydrogen formed partially reduces the P4O10 forming lower oxides of phosphorus and water. Elemental silicon is precipitated as reddish-brown solid, which is separated by dissolving out the phosphorus oxides. Silica and disiloxane are not formed in the reaction.
Keywords:Author to whom correspondence should be addressed  
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