| Defects mediated ferromagnetism in a V-doped 6H—SiC single crystal |
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| 引用本文： | 卓世异,刘学超,熊泽,闫文盛,忻隽,杨建华,施尔畏,陈大明,刘颖力,李元勋,杨楷,张怀武.Defects mediated ferromagnetism in a V-doped 6H—SiC single crystal[J].中国物理 B,2012,21(6):67503-067503. |
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| 作者姓名： | 卓世异 刘学超 熊泽 闫文盛 忻隽 杨建华 施尔畏 陈大明 刘颖力 李元勋 杨楷 张怀武 |
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| 作者单位： | Shanghai Institute of Ceramics,Chinese Academy of Sciences;Graduate University of the Chinese Academy of Sciences;National Synchrotron Radiation Laboratory,University of Science and Technology of China |
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| 基金项目： | Project supported by the Young Scientists Fund of the National Natural Science Foundation of China （Grant No. 51002176） and the Innovation Programs of the Chinese Academy of Sciences （Grant No. KJCX2-EW-W10）. |
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| 摘 要： | Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method.The V concentration is determined to be 3.76×1017 at/cm3 and 6.14×1017 at/cm3 by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples,respectively.The undoped 6H-SiC shows diamagnetism,while the V-doped 6H-SiC exhibits weak ferromagnetism.The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample.However,the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality.It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals.
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| 关 键 词： | V-doping 6H-SiC defects magnetic materials |
| 收稿时间： | 2011-11-16 |
Defects mediated ferromagnetism in a V-doped 6H-SiC single crystal |
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| Zhuo Shi-Yi,Liu Xue-Chao,Xiong Ze,Yan Wen-Sheng,Xin Jun,Yang Jian-Hua,Shi Er-Wei.Defects mediated ferromagnetism in a V-doped 6H-SiC single crystal[J].Chinese Physics B,2012,21(6):67503-067503. |
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| Authors: | Zhuo Shi-Yi Liu Xue-Chao Xiong Ze Yan Wen-Sheng Xin Jun Yang Jian-Hua Shi Er-Wei |
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| Institution: | a. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;b. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;c. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China |
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| Abstract: | Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method.The V concentration is determined to be 3.76×1017 at/cm3 and 6.14×1017 at/cm3 by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples,respectively.The undoped 6H-SiC shows diamagnetism,while the V-doped 6H-SiC exhibits weak ferromagnetism.The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample.However,the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality.It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals. |
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| Keywords: | V-doping 6H-SiC defects magnetic materials |
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