Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers |
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Authors: | Wu Le-Juan Li Shu-Ti Liu Chao Wang Hai-Long Lu Tai-Ping Zhang Kang Xiao Guo-Wei Zhou Yu-Gang Zheng Shu-Wen Yin Yi-An Yang Xiao-Dong |
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Institution: | a. Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;b. APT Electronics Ltd, Nansha District, Guangzhou 511458, China |
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Abstract: | InGaN-based light-emitting diodes with p-GaN and p-AlGaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-AlGaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-AlGaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency. |
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Keywords: | GaN-based light-emitting diodes hole injection layer injection efficiency |
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