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Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology
Authors:Xiong Yu-Qing  Li Xing-Cun  Chen Qiang  Lei Wen-Wen  Zhao Qiao  Sang Li-Jun  Liu Zhong-Wei  Wang Zheng-Duo  Yang Li-Zhen
Institution:a Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China;b Laboratory of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
Abstract:Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.
Keywords:aluminum  plasma-assisted atomic layer deposition  annealing
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