Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer |
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Authors: | Zhang Wei Xue Jun-Shuai Zhou Xiao-Wei Zhang Yue Liu Zi-Yang Zhang Jin-Cheng Hao Yue |
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Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract: | An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 1019 cm-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it. |
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Keywords: | AlGaN/GaN superlattice Si doping |
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