Substrate-induced stress in silicon nanocrystal/SiO2 multilayer structure |
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Authors: | Tao Ye-Liao Zuo Yu-Hua Zheng Jun Xue Chun-Lai Cheng Bu-Wen Wang Qi-Ming Xu Jun |
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Affiliation: | a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;b School of Electrical Science and Technology, Nanjing University, Nanjing 210093, China |
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Abstract: | A Raman frequency upshift of nc-Si phonon mode is observed at room temperature, which is attributed to a strong compressive stress in Si nanocrystals. The 10-period amorphous-Si(3 nm)/amorphous-SiO2 (3 nm) layers are deposited by high vacuum radio-frequency magnetron sputtering on quartz and sapphire substrates at different temperatures. The samples are then annealed in N2 atmosphere at 1100 ℃ for 1 h for Si crystallization. It is demonstrated that the presence of a supporting substrate at the high grown temperature can induce different types of stresses in the Si nanocrystal layers. The strain is attributed to the difference in thermal expansion coefficient between the substrate and the Si/SiO2 SL film. Such a substrate-induced stress indicates a new method to tune the optical and the electronic properties of Si nanocrystals for strained engineering. |
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Keywords: | stress Raman spectrum silicon nanocrystal sputtering |
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