| A k·p analytical model for valence band of biaxial strained Ge on（001） Si1-xGex |
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| 引用本文： | 王冠宇,张鹤鸣,高翔,王斌,周春宇. A k·p analytical model for valence band of biaxial strained Ge on（001） Si1-xGex[J]. 中国物理 B, 2012, 21(5): 57103-057103. DOI: 10.1088/1674-1056/21/5/057103 |
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| 作者姓名： | 王冠宇 张鹤鸣 高翔 王斌 周春宇 |
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| 作者单位： | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China |
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| 基金项目： | Project supported by the Fundamental Research Funds for the Central Universities China （Grant Nos. 72105499 and 72104089）; the Natural Science Basic Research Plan in Shaanxi Province China （Grant No. 2010JQ8008） |
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| 摘 要： | In this paper,the dispersion relationship is derived by using the k·p method with the help of the perturbation theory,and we obtain the analytical expression in connection with the deformation potential.The calculation of the valence band of the biaxial strained Ge/（001）Si1-xGex is then performed.The results show that the first valence band edge moves up as Ge fraction x decreases,while the second valence band edge moves down.The band structures in the strained Ge/（001）Si 0.4 Ge 0.6 exhibit significant changes with x decreasing in the relaxed Ge along the [0,0,k] and the [k,0,0] directions.Furthermore,we employ a pseudo-potential total energy package（CASTEP） approach to calculate the band structure with the Ge fraction ranging from x = 0.6 to 1.Our analytical results of the splitting energy accord with the CASTEP-extracted results.The quantitative results obtained in this work can provide some theoretical references to the understanding of the strained Ge materials and the conduction channel design related to stress and orientation in the strained Ge pMOSFET.
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| 关 键 词： | Si1-xGex 硅锗 价带 应变 双轴 PMOSFET 模型 能带结构 |
| 收稿时间： | 2011-09-16 |
A k·p analytical model for valence band of biaxial strained Ge on (001) Si1-xGex |
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| Wang Guan-Yu,Zhang He-Ming,Gao Xiang,Wang Bin,Zhou Chun-Yu. A k·p analytical model for valence band of biaxial strained Ge on (001) Si1-xGex[J]. Chinese Physics B, 2012, 21(5): 57103-057103. DOI: 10.1088/1674-1056/21/5/057103 |
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| Authors: | Wang Guan-Yu Zhang He-Ming Gao Xiang Wang Bin Zhou Chun-Yu |
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| Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | In this paper, the dispersion relationship is derived by using the k·p method with the help of the perturbation theory, and we obtain the analytical expression in connection with the deformation potential. The calculation of the valence band of the biaxial strained Ge/(001)Si1-xGex is then performed. The results show that the first valence band edge moves up as Ge fraction x decreases, while the second valence band edge moves down. The band structures in the strained Ge/ (001)Si0.4Ge0.6 exhibit significant changes with x decreasing in the relaxed Ge along the [0, 0, k] and the [k, 0, 0] directions. Furthermore, we employ a pseudo-potential total energy package (CASTEP) approach to calculate the band structure with the Ge fraction ranging from x=0.6 to 1. Our analytical results of the splitting energy accord with the CASTEP-extracted results. The quantitative results obtained in this work can provide some theoretical references to the understanding of the strained Ge materials and the conduction channel design related to stress and orientation in the strained Ge pMOSFET. |
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| Keywords: | strained Ge valence band k· p method dispersion relationship |
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