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The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes |
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| Authors: | Gong Chang-Chun Fan Guang-Han Zhang Yun-Yan Xu Yi-Qin Liu Xiao-Ping Zheng Shu-Wen Yao Guang-Rui Zhou De-Tao |
| Institution: | Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
| Abstract: | P-AlGaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons: (i) enhanced hole concentration and hole carrier transport efficiency in AlGaN/GaN superlattices, and (ii) enhanced blocking of electron overflow between multiple quantum-wells and AlGaN/GaN superlattices. |
| Keywords: | P-AlGaN/P-GaN superlattices numerical simulation efficiency droop |
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