Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well |
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Authors: | Chen Zhao Yang Wei Liu Lei Wan Cheng-Hao Li Lei He Yong-Fa Liu Ning-Yang Wang Lei Li Din Chen Wei-Hua Hu Xiao-Dong |
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Affiliation: | State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China |
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Abstract: | The InGaN/GaN blue light emitting diode (LED) is numerically investigated using a triangular-shaped quantum well model, which involves analysis on its energy band, carrier concentration, overlap of electron and hole wave functions, radiative recombination rate, and internal quantum efficiency. The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions (above 90%) under the polarization field. Consequently, the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells, which is three times lower than that in a conventional LED. |
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Keywords: | efficiency droop alleviation InGaN/GaN triangular quantum well blue light emitting diode |
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