| Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors |
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| 引用本文： | 冯倩,李倩,邢韬,王强,张进成,郝跃. Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors[J]. 中国物理 B, 2012, 21(6): 67305-067305. DOI: 10.1088/1674-1056/21/6/067305 |
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| 作者姓名： | 冯倩 李倩 邢韬 王强 张进成 郝跃 |
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| 作者单位： | School of Microelectronics,Xidian University;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University |
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| 基金项目： | Project supported by the Basic Science Research Fund for the Central Universities (Grant No. K50511250009) |
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| 摘 要： | We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.
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| 关 键 词： | indium aluminum nitride metal-oxide-semiconductor high electron mobility transistor lanthanum oxide |
| 收稿时间： | 2011-08-05 |
Performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors |
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| Feng Qian,Li Qian,Xing Tao,Wang Qiang,Zhang Jin-Cheng,Hao Yue. Performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors[J]. Chinese Physics B, 2012, 21(6): 67305-067305. DOI: 10.1088/1674-1056/21/6/067305 |
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| Authors: | Feng Qian Li Qian Xing Tao Wang Qiang Zhang Jin-Cheng Hao Yue |
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| Affiliation: | a. School of Microelectronics, Xidian University, Xi'an 710071, China;b. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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| Abstract: | We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and InAlN/GaN high electron mobility transistors (HEMTs). The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs=4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs=1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse. |
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| Keywords: | indium aluminum nitride metal-oxide-semiconductor high electron mobility transistor lanthanum oxide |
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