Graphene films grown on sapphire substrates via solid source molecular beam epitaxy |
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Authors: | Tang Jun Kang Chao-Yang Li Li-Min Liu Zhong-Liang Yan Wen-Sheng Wei Shi-Qiang Xu Peng-Shou |
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Affiliation: | a. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China;b. Hefei IRICO Epilight Technology Co., Ltd., Hefei 230011, China;c. School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, China |
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Abstract: | A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm. |
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Keywords: | graphene SiC layer sapphire substrate |
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