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A novel power UMOSFET with a variable K dielectric layer |
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| Authors: | Wang Ying Lan Hao Cao Fei Liu Yun-Tao Liu Yun-Tao |
| Institution: | College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China |
| Abstract: | A novel split-gate power UMOSFET with a variable K dielectric layer is proposed.This device shows a 36.2% reduction in the specific on-state resistance at a breakdown voltage of 115 V,as compared with the SGE-UMOS device.Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Qg × RON and BV2/RON,as compared with the previous power UMOSFET. |
| Keywords: | specific on-resistance power UMOSFET split gate variable K dielectric layer |
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