Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling |
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Authors: | M Jacquemet M Domenech G Lucas-Leclin P Georges J Dion M Strassner I Sagnes A Garnache |
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Institution: | (1) Laboratoire Charles Fabry de l’Institut d’Optique, CNRS, Univ. Paris-Sud, Campus Polytechnique RD 128, 91127 Palaiseau Cedex, France;(2) Laboratoire de Photonique et de Nanostructures, Route de Nozay CNRS UPR 20, 91460 Marcoussis, France;(3) Centre d’Electronique et de Micro-optoélectronique de Montpellier, CNRS UMR5507, 34095 Universite Montpellier 2, Montpellier Cedex 5, France |
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Abstract: | This work reports single-frequency laser oscillation at λ=1003.4 nm of a diode-pumped vertical external cavity surface-emitting
semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved
by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied.
Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal
mode. Furthermore, single-frequency laser emission at λ=501.7 nm is obtained by intracavity frequency doubling, resulting
in a total output power as high as 62 mW.
PACS 42.55.Px; 42.55.Xi; 42.62.Eh; 42.65.Ky |
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