Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure

Organic nonvolatile resistive switching memory is developed via selective incorporation of fullerene derivatives, 6,6]‐phenyl‐C61 butyric acid methyl ester (PCBM), into the nanostructure of self‐assembled poly(styrene‐b‐methyl methacrylate) (PS₁₀‐b‐PMMA₁₃₀) diblock copolymer. PS₁₀‐b‐PMMA₁₃₀ diblock copolymer provides a spatially ordered nanotemplate with a 10‐nm PS nanosphere domain surrounded by a PMMA matrix. Spin casting of the blend solution of PS₁₀‐b‐PMMA₁₃₀ and PCBM spontaneously forms smooth films without PCBM aggregation in which PCBM molecules are incorporated within a PS nanosphere domain of PS₁₀‐b‐PMMA₁₃₀ nanostructure by preferential intermixing propensity of PCBM and PS. Based on the well‐defined PS₁₀‐b‐PMMA₁₃₀/PCBM nanostructure, resistive random access memory (ReRAM) exhibits significantly improved bipolar‐switching behavior with stable and reproducible properties at low operating voltages (RESET at 1.3 V and SET at −1.5 V) under ambient conditions. Finally, flexible memory devices are achieved using a nanostructured PS₁₀‐b‐PMMA₁₃₀/PCBM composite in which no significant degradation of electrical properties is observed before and after bending.