High‐power HgGa2S4 optical parametric oscillator pumped at 1064 nm and operating at 100 Hz

The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ～5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS₂ crystal, operation of the 1064‐nm pumped HgGa₂S₄ OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold.