Simulation of ultrasound influence on melt convection for the growth of GaxIn1−xSb and Si single crystals by the Czochralski method |
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| Authors: | G.N. Kozhemyakin L.V. NemetsA.A. Bulankina |
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| Affiliation: | Laboratory of Crystal Growth, Department of Micro and Nanoelectronics, Volodumur Dahl East Ukrainian National University, Bl. Molodezhniy, 20 A, 91034 Lugansk, Ukraine |
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| Abstract: | The flow simulation for GaxIn1−xSb and Si melts was conducted for quasi-steady conditions. The maximum velocity was under the solid–liquid interface near periphery of the crystals. An introduction of ultrasound into the liquid formed a standing wave channel under the solid–liquid interface, which acted on melt particles. The calculations of convective and ultrasonic forces acting on the particles in the melt showed that the ultrasonic force is much higher than the convective force. |
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| Keywords: | Standing wave channel Convective flow Crystal growth Semiconducting III&ndash V materials Semiconducting silicon |
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