X-ray absorption study of light emitting silicon nanocrystals |
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Authors: | N. Daldosso, G. Dalba, R. Grisenti, L. Dal Negro, L. Pavesi, F. Rocca, F. Priolo, G. Franz , D. Pacifici,F. Iacona |
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Affiliation: | a INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento), Italy;b CNR-IFN, Sezione “CeFSA” di Trento, I-38050 Povo (Trento), Italy;c INFM-Dipartimento di Fisica, Università di Catania, Corso Italia 57, I-95129, Catania, Italy;d CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121, Catania, Italy |
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Abstract: | X-ray absorption spectra obtained by total electron yield (TEY) at the Si absorption K-edge have been measured to have chemical and structural information about Si nanocrystals (Si-nc) produced by plasma-enhanced chemical vapour deposition (PECVD). The TEY technique has been employed to investigate the formation of Si-nc and the modification of the silica matrix as a function of annealing temperature (500–1250°C) and of silicon content in the film (35–46 at%). The amount of silicon present in the Si-nc has been evaluated by TEY. Thanks to Rutherford backscattering spectrometry measurements, the amount of Si atoms bonded to oxygen and to nitrogen, incorporated by PECVD, has been assessed. A compositional model that interprets the experimental findings is presented. |
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