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Etching of silicon nanowires on Ag(1 1 0) by atomic hydrogen |
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| Authors: | E Salomon T Angot J-M Layet CI Nlebedim |
| Institution: | a Physique des Interactions Ioniques et Moléculaires, UMR CNRS-Université de Provence 6633, Campus de Saint-Jérôme, Case 241, Avenue de l’Escadrille Normandie-Niémen, 13397 Marseille Cedex 20, France b Material Physics, MAP, ICT, Royal Institute of Technology, Electrum 229, S-164 40 Stockholm, Sweden |
| Abstract: | Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface. |
| Keywords: | Atomic hydrogen Silicon nanowires Scanning Tunnelling Microscopy X-Ray Photoelectron Spectroscopy Electron Energy Loss Spectroscopy |
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