C面蓝宝石抛光液组分优化

本文利用单因素及正交试验探究磨粒种类、抛光液pH值、表面活性剂种类、磨粒粒径对C面蓝宝石化学机械抛光材料去除率的影响,试验结果表明: 采用二氧化硅作为磨粒能得到较高的材料去除率及较好的表面形貌;材料去除率随抛光液pH值的增大呈现先增大再减小的趋势,其中pH值在9附近能得到较好的去除率;材料去除率还随着磨粒粒径的增大而增大;使用三乙醇胺(TEA)、十六烷基三甲基溴化铵(CTAB)作表面活性剂能得到较高的材料去除率;各试验因素对蓝宝石晶片材料去除率的主次顺序为磨粒粒径、表面活性剂、抛光液pH值;其中当磨粒粒径为50 nm,表面活性剂选CTAB,抛光液pH值为9既能得到较高的材料去除率又能获得较好的表面质量。

Composition Optimization of Polishing Slurry for C-Plane Sapphire

In this paper, single factor and orthogonal experiments were used to explore the influence of abrasive grain types, polishing slurry pH value, surfactant type, and abrasive grain size on the removal rate of C-plane sapphire chemical mechanical polishing materials. The test results show that: a higher material removal rate and a better surface morphology can obtained when using silica as abrasive particles; the material removal rate shows a trend of first increasing and then decreasing with the increase of the pH value of the polishing slurry, and the pH value of the 9 attachment can get a better removal rate; the material removal rate also increases with the increase of abrasive particle size; using triethanolamine (TEA) and cetyltrimethylammonium bromide (CTAB) as surfactants can get a higher material removal rate; the primary and secondary order of each test factor on the removal rate of sapphire wafer material is abrasive particle size, surfactant, polishing slurry pH value; when the abrasive particle size is 50 nm, the surfactant is CTAB, and the polishing slurry pH value is 9 can get higher material removal rate and better surface quality.