Infrared lattice-reflection spectroscopy of Zn1−x
CdxSe epitaxial layers grown on a GaAs substrate by molecular-beam epitaxy |
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| Authors: | L K Vodop’yanov S P Kozyrev Yu G Sadof’ev |
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| Institution: | (1) P. N. Lebedev Physical Institute, Russian Academy of Sciences, 117924 Moscow, Russia |
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| Abstract: | Results are presented of the first measurements of infrared reflection spectra of Zn1−x
CdxSe films (x=0–0.55; 1) grown on a GaAs substrate by molecular-beam epitaxy. It is shown by a mathematical analysis of the experimental
spectra that the investigated Zn1−x
CdxSe alloy system manifests a unimodal rearrangement of its vibrational spectrum as the composition is varied.
Fiz. Tverd. Tela (St. Petersburg) 41, 982–985 (June 1999) |
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