Rashba spin–orbit effect on the magnetocapacitance of a 2DEG in a diluted magnetic semiconductor |
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Authors: | G.S. Kliros |
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Affiliation: | aDepartment of Aeronautical Sciences, Division of Electronics and Communication Engineering, Hellenic Air-Force Academy, Dekeleia Air-Force Base GR-1010, Greece |
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Abstract: | We investigate the magnetocapacitance of the two-dimensional electron gas (2DEG) embedded in diluted magnetic semiconductors in the presence of Rashba spin–orbit interaction (SOI). We present calculations on the energy spectrum and density of states and show that the tunable spin–orbit coupling and the enhanced Zeeman splitting have a strong effect on the magnetocapacitance of the structure. In the presence of Rashba SOI, a typical beating pattern with well defined node-positions in the oscillating capacitance is observed. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the total Zeeman splitting (including the s–d exchange interaction) and the Rashba SOI is discussed. |
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Keywords: | Mesoscopic devices Spin– orbit interaction Dilute magnetic semiconductors Magnetocapacitance |
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