Epitaxial growth of borophene on substrates |
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| Institution: | 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;3. Songshan Lake Materials Laboratory, Dongguan 523808, China;1. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, PR China;2. School of Automation Engineering & School of Foreign Languages, University of Electronic Science and Technology of China, Chengdu 610054, PR China;1. School of Mechanical Engineering, Dongguan University of Technology, Dongguan, 523808, China;2. School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan, 523808, China;3. Shenzhen Nuoan Environmental & Safety Inc., Shenzhen, 518107, China;4. College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China;5. Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of 2D NMs for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Engineering, Shenzhen University, Shenzhen, 518060, China;6. Department of Mechanical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China;7. Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, 05006, South Korea;8. Department of BioChemistry, Quaid-i-Azam University Islamabad, 45320, Pakistan;9. Shenzhen Children''s Hospital, Clinical Medical College of Southern University of Science and Technology, Shenzhen, 518038, Guangdong, PR China;10. School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, Hunan, China;11. School of Chemical and Biomolecular Engineering, The University of Sydney, 2006, Sydney, Australia;12. School of Science, Royal Melbourne Institute of Technology University, Melbourne, Victoria, Australia;13. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China;1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;2. Department of Microbiology, Tumor and Cell Biology, Karolinska Institute, Stockholm 17177, Sweden;3. Department of Radiation Oncology, The 2nd Clinical medical College (Shenzhen People’s Hospital) of Jinan University, Shenzhen 518020, China;4. Shenzhen International Institute for Biomedical Research, Shenzhen, China;5. Department of Infectious Diseases, Peking University Shenzhen Hospital, Shenzhen 518036, China;6. School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China;3. University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Borophene, a two-dimensional (2D) planar boron sheet, has attracted dramatic attention for its unique physical properties that are theoretically predicted to be different from those of bulk boron, such as polymorphism, superconductivity, Dirac fermions, mechanical flexibility and anisotropic metallicity. Nevertheless, it has long been difficult to obtain borophene experimentally due to its susceptibility to oxidation and the strong covalent bonds in bulk forms. With the development of growth technology in ultra-high vacuum (UHV), borophene has been successfully synthesized by molecular beam epitaxy (MBE) supported by substrates in recent years. Due to the intrinsic polymorphism of borophene, the choice of substrates in the synthesis of borophene is pivotal to the atomic structure of borophene. The different interactions and commensuration of borophene on various substrates can induce various allotropes of borophene with distinct atomic structures, which suggests a potential approach to explore and manipulate the structure of borophene and benefits the realization of novel physical and chemical properties in borophene due to the structure–property correspondence. In this review, we summarize the recent research progress in the synthesis of monolayer (ML) borophene on various substrates, including Ag(1 1 1), Ag(1 1 0), Ag(1 0 0), Cu(1 1 1), Cu(1 0 0), Au(1 1 1), Al(1 1 1) and Ir(1 1 1), in which the polymorphism of borophene is present. Moreover, we introduce the realization of bilayer (BL) borophene on Ag(1 1 1), Cu(1 1 1) and Ru(0 0 0 1) surfaces, which possess richer electronic properties, including better thermal stability and oxidation resistance. Then, the stabilization mechanism of polymorphic borophene on their substrates is discussed. In addition, experimental investigations on the unique physical properties of borophene are also introduced, including metallicity, topology, superconductivity, optical and mechanical properties. Finally, we present an outlook on the challenges and prospects for the synthesis and potential applications of borophene. |
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| Keywords: | 2D materials Borophene Polymorphism Metal substrates Molecular beam epitaxy |
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