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Enhanced photoluminescence from gallium arsenide semiconductor coated with Au nanoparticles |
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| Authors: | Xiuli Zhou Qiangmin Wei Lumin Wang Bhuwan Joshi Qihuo Wei Kai Sun |
| Affiliation: | (1) School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China;(2) Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA;(3) Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, USA;(4) Department of Chemical Physics, Kent State University, Kent, OH 44242, USA |
| Abstract: | We demonstrate a method for improving photoluminescence of gallium arsenide semiconductor by simply coating a thin layer of Au nanoparticles on its surface. Further focused ion beam bombardment at the sputter-coated Au film was conducted to control the size, the distribution, and the morphology of the Au nanoparticles via the changes of the focused ion-beam irradiation conditions. Photoluminescence of GaAs coated with the Au nanoparticles with average size of 5 nm in diameter is enhanced to about threefold relative to that of pure GaAs. Numerical calculations were conducted based on finite-different time-domain method. Results indicated that the enhancement is mainly attributed to the contribution of local surface plasmon resonance of Au nanoparticles. |
| Keywords: | KeywordHeading" >PACS 81.05.-t 81.07.-b 78.55.Cr |
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