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Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO |
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| Authors: | Jong-Han Lee Sangwon ShinKeun Hwa Chae Donghwan KimJonghan Song |
| Institution: | a Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Sungbuk-Gu, Seoul 137-713, Republic of Korea b Research Institute of Engineering and Technology, Korea University, 5-1 Anam-Dong, Sungbuk-Gu, Seoul 137-713, Republic of Korea c LCD R&D Center, LCD Business, Samsung Electronics, Yongin-City, Gyeonggi-Do 449-711, Republic of Korea d Nano Analysis Center, Korea Institute of Science and Technology, 39-1 Hawolgok-Dong, Sungbuk-Ku, Seoul 136-791, Republic of Korea |
| Abstract: | 1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 × 1017 ions/cm2 at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at room-temperature and the saturation magnetization of this sample was estimated to be 0.12 μB per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d9) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d10) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 °C on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase. |
| Keywords: | Dilute magnetic semiconductor Ferromagnetic Copper implantation ZnO |
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