The application of conventional photolithography to microscale organic resistive memory devices |
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Authors: | Byungjin Cho Kyu Hyun Nam Sunghoon SongYongsung Ji Gun-Young Jung Takhee Lee |
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Institution: | a School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea b Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea c Research Park, IT&E materials R&D, LG Chem, Daejeon 305-380, Republic of Korea d Department of Physics and Astronomy, Seoul National University, Seoul 151-744, Republic of Korea |
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Abstract: | We demonstrate the application of conventional photolithography to fabricate organic memory devices in an array structure with a cell area of 4 × 4 μm2 without damaging the underlying organic memory layer. Applying photolithography to organic electronic devices is not trivial because the solvents used during lithography may dissolve and damage the previously coated organic layers. The application of photolithography to our organic devices was possible because of the introduction of polymethyl methacrylate (PMMA)/polyvinyl alcohol (PVA) onto the memory active layer, where PMMA functions as a buffer layer to prevent dissolution of the PVA layer during developing process, and PVA acts as a striped layer during metal lift-off process. Embedded Al bottom electrodes were particularly constructed to minimize the switching failure. The completed organic memory devices exhibited typical unipolar switching behavior and excellent memory performance in terms of their statistical memory parameters (ON and OFF currents and threshold voltages), ON/OFF ratio (>102), endurance (>230 cycles), and retention (>104 s). This convenient photolithography patterning technique is applicable for the further scaling of many types of organic devices. |
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Keywords: | Organic resistive memory Conventional photolithography Embedded electrodes |
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