Improving microwave dielectric properties of La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics with CuO additive |
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Authors: | Yih-Chien Chen |
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Institution: | Department of Electrical Engineering, Lunghwa University of Science and Technology, Gueishan Shiang, Taoyuan County, Taiwan, ROC |
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Abstract: | The microwave dielectric properties of CuO-doped La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics were investigated with a view to their application in microwave devices. CuO-doped La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of CuO-doped La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics exhibited no significant variation of phase with sintering temperature. By adding 0.75 wt.% CuO, a dielectric constant of 20.07, a quality factor (Q × f) of 63,000 GHz, and a temperature coefficient of resonant frequency τf (−77.0 ppm/°C) were obtained when La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics were sintered at 1500 °C for 4 h. |
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Keywords: | La2 98/3Sr0 01(Mg0 5Sn0 5)O3 Dielectric constant Quality factor Temperature coefficient of resonant frequency |
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