Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells |
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Authors: | Byeong-Yun Oh Jeong-Hwan KimJin-Woo Han Dae-Shik Seo Hwan Soo JangHo-Jin Choi Seong-Ho BaekJae Hyun Kim Gi-Seok HeoTae-Won Kim Kwang-Young Kim |
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Institution: | a Department of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea b Department of Nano and Bio Technology, Daegu-Gyeongbuk Institute of Science and Technology (DGIST), 75 Gongdanbuk2gil, Dalseo-tu, Daegu 704-230, Republic of Korea c National Center for Nanoprocess and Equipments, Korea Institute of Industrial Technology (KITECH), 110-9 Oryong-dong, Buk-gu, Gwangju 500-480, Republic of Korea |
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Abstract: | Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films was changed, and the optimum condition for best crystallinity was identified by varying the growth temperature. Furthermore, the carrier concentration of free electron was increased by substituting the Zn sites with Al atoms in the crystal, resulting from monolayer growth based on alternate self-limiting surface chemical reactions. The electrical resistivity of ZnO:Al film grown by ALD at 225 °C reached the lowest value of 8.45 × 10−4 Ω cm, with a carrier mobility of 9.00 cm2 V−1 s−1 and optical transmittance of ∼93%. This result demonstrates that ZnO:Al films grown by ALD possess excellent potential for applications in electronic devices and displays as transparent electrodes and surface passivation layers. |
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Keywords: | Zinc oxide II-VI semiconductors Chemical vapor deposition Atomic layer deposition Thin film structure Electrical properties Solar cells |
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