Effect of pore size on ferroelectric properties of multiferroic BiFeO3 films prepared on porous silicon |
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| Authors: | V Annapu Reddy NP PathakR Nath |
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| Institution: | a Ferroelectric Materials and Devices Research Laboratory, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand 247667, India
b Radio Frequency Integrated Circuits Research Laboratory, Department of Electronics & Computer Engineering, Indian Institute of Technology Roorkee, Uttarakhand 247667, India |
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| Abstract: | The ferroelectric properties of BiFeO3 (BFO) films spray deposited on porous silicon have been studied. The analysis of XRD and FESEM investigations show that the crystalline strain in the BFO films increases with pore size. The BFO films on porous silicon substrate showed improvement in ferroelectric fatigue behavior, remanent polarization and ferroelectric switching time. A maximum memory window of 5.54 V at 1 MHz and a large remanent polarization (Pr) of 13.1 μC/cm2 have been obtained at room temperature. The improvement in the ferroelectric properties of these films has been correlated to the crystalline strain. |
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| Keywords: | Porous silicon Switching Remanent polarization Multiferroic |
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