Dielectric-breakdown-like forming process in the unipolar resistance switching of Ta2O5−x thin films |
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| Authors: | Moon Jee YoonShin Buhm Lee Hyang Keun YooSoobin Sinn Bo Soo Kang |
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| Institution: | a ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
b Department of Applied Physics, Hanyang University, Ansan, Gyeonggi-do 426-791, Republic of Korea |
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| Abstract: | We report unipolar resistance switching (URS) in Ta2O5−x thin films. The current increased suddenly when we applied voltages up to 5-7 V to the pristine state of Pt/Ta2O5−x/Pt, Ni/Ta2O5−x/Pt, and Ti/Ta2O5−x/Pt cells. Just after this forming process, we observed a repetitive URS occurring independently of the electrodes. We found that the required voltages for the forming process did not depend on the top electrode type, but on the film thickness. These results suggest that the forming process is driven by a dielectric-breakdown-like phenomenon, and that URS occurs due to the formation and rupture of conducting channels inside the Ta2O5−x thin film. |
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| Keywords: | Unipolar resistance switching Dielectric breakdown Resistance random-access memory |
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