Annealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method |
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| Authors: | Sanghwa YoonIlgoo Huh Jae-Hong Lim Bongyoung Yoo |
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| Institution: | a Department of Materials Engineering, Hanyang University, Ansan-si, Gyeonggi-do 426-791, Republic of Korea
b Electrochemistry Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon-si, Gyeongnam 641-831, Republic of Korea |
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| Abstract: | Microstructural and electrical properties of potentiostatically electrodeposited ZnO thin films from an aqueous bath were investigated after annealing at different temperatures in Ar and 5% H2/Ar atmospheres. It is confirmed that the bandgap energy of ZnO thin films decreased with annealing from 3.42 to 3.27-3.29 eV by calculating the wavelength of the absorption region. The annealing at temperatures as low as 200 °C decreased the sheet resistance of ZnO thin films because of the extinction of Zn(OH)2 in the atmosphere. In addition, the sheet resistance of ZnO thin films decreased by annealing in a 5% H2 atmosphere, which caused an increase of carrier concentration by hydrogen reduction. |
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| Keywords: | ZnO thin films Annealing process Electrochemical techniques Electrical properties |
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