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Pressure dependence of the band-gap energy and the conduction-band mass for an n-type InGaAs/GaAs strained single-quantum well
Authors:E D Jones  S W Tozer  T Schmiedel
Abstract:We report the measurement of the pressure dependence for the band-gap energy and conduction-band mass for an 80 Å-wide n-type strained-single-quantum well at 4.2 K for pressures between 0 and 35 kbar and fields up to 30 T. The band-gap energy , at each pressure, was determined by extrapolating the magnetoluminescence “fan-diagram” to zero magnetic field. The pressure dependence of the band-gap energy was found to be quadratic with a linear term of about 10.3 meV/kbar and a small, , quadratic contribution. Analyses of the pressure-dependent 4.2 K magnetoluminescence data yield a conduction-band mass logarithmic pressure derivative

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Keywords:Magnetoluminescence  Pressure  Quantum well  Strain
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