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High-pressure crystal growth and magnetic and electrical properties of the quasi-one dimensional osmium oxide Na2OsO4
Authors:Y.G. Shi  Y.F. Guo  S. Yu  M. Arai  A. Sato  E. Takayama-Muromachi  T. Varga  J.F. Mitchell
Affiliation:a International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
b JST, Transformative Research-Project on Iron Pnictides (TRIP), 5 Sanbancho, chiyoda-ku, Tokyo 102-0075, Japan
c Superconducting Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Ibaraki, Japan
d Computational Materials Science Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
e Materials Analysis Station, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
f Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810, Japan
g Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, USA
Abstract:Na2OsO4 crystals were grown by a NaCl flux method under high pressure. It crystallizes in the Ca2IrO4-type structure without having additional elements or metal vacancies, which are usually accommodated. It appears that Na2OsO4 is a metal-stoichiometric Ca2IrO4-type compound never been synthesized to date. Na2OsO4 has the octahedral environment of Os6+O6 so that the electronic configuration is 5d2, suggesting the magnetic S=1 ground state. However, magnetization, electrical resistivity, and specific heat measurements indicated that the non-magnetic S=0 state is much likely for Na2OsO4 than the S=1 state. Band structure calculations and the structure analysis found that the disagreement is probably due to the statically uniaxial compression of the OsO6 octahedra, resulting in splitting of the t2g band.
Keywords:Ca2IrO4   High pressure synthesis   Osmium oxides
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