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High-pressure crystal growth and magnetic and electrical properties of the quasi-one dimensional osmium oxide Na2OsO4 |
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| Authors: | YG Shi YF Guo S Yu M Arai A Sato E Takayama-Muromachi T Varga JF Mitchell |
| Institution: | a International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan b JST, Transformative Research-Project on Iron Pnictides (TRIP), 5 Sanbancho, chiyoda-ku, Tokyo 102-0075, Japan c Superconducting Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Ibaraki, Japan d Computational Materials Science Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan e Materials Analysis Station, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan f Department of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810, Japan g Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, USA |
| Abstract: | Na2OsO4 crystals were grown by a NaCl flux method under high pressure. It crystallizes in the Ca2IrO4-type structure without having additional elements or metal vacancies, which are usually accommodated. It appears that Na2OsO4 is a metal-stoichiometric Ca2IrO4-type compound never been synthesized to date. Na2OsO4 has the octahedral environment of Os6+O6 so that the electronic configuration is 5d2, suggesting the magnetic S=1 ground state. However, magnetization, electrical resistivity, and specific heat measurements indicated that the non-magnetic S=0 state is much likely for Na2OsO4 than the S=1 state. Band structure calculations and the structure analysis found that the disagreement is probably due to the statically uniaxial compression of the OsO6 octahedra, resulting in splitting of the t2g band. |
| Keywords: | Ca2IrO4 High pressure synthesis Osmium oxides |
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