Quantitative determination of site occupancy of multi-rare-earth elements doped into Ca2SnO4 phosphor by electron channeling microanalysis

X-ray fluorescence analysis based on electron channeling effects in transmission electron microscopy (TEM) was performed on Ca₂SnO₄ phosphor materials doped with Eu³⁺/Y³⁺ at various concentrations, which showed red photoluminescence associated with the ⁵D₀-⁷F₂ electric dipole transition of Eu³⁺ ions. The method provided direct information on which host element site dopant elements occupy, the results of which were compared with those of X-ray diffraction (XRD)-Rietveld analysis. The obtained results indicated that while it is not favorable for a part of Eu³⁺ to occupy the smaller Sn⁴⁺ site, this is still energetically better than creating Ca vacancies or any other of the possible charge balance mechanisms. The local lattice distortions associated with dopant impurities with different ionic radii were also examined by TEM-electron energy-loss spectroscopy (TEM-EELS). The change in PL intensity as a function of dopant concentration is discussed based on the experimental results, although the general concept of concentration quenching applies.