| 稀土元素Er掺杂AlN的压电性能 |
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| 引用本文： | 泰智薇,杨成韬,胡现伟,谢易微.稀土元素Er掺杂AlN的压电性能[J].压电与声光,2018,40(6):822-824. |
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| 作者姓名： | 泰智薇 杨成韬 胡现伟 谢易微 |
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| 作者单位： | （电子科技大学 电子薄膜与集成器件国家重点实验室，四川 成都 610054） |
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| 基金项目： | 中央高校基本科研业务费专项资金资助项目（ZYGX2013Z001） |
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| 摘 要： | 采用第一性原理密度泛函理论法研究了纤锌矿结构AlN中掺杂不同含量Er后的晶体结构和压电性能。计算结果表明，随着掺杂Er原子数比x由0增加到25%，ErxAl1-xN晶体的晶胞参数、晶胞体积和键长显著增大，压电性能得到提升。当x=25%时，ErxAl1-xN体系的压电常数d33为8.67 pC/N，比纯AlN提高了795%，为未来AlN压电薄膜材料研究领域提供了更多可选材料。
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| 关 键 词： | ErxAl1-xN 压电性能 晶体结构 第一性原理 掺杂改性 |
The Piezoelectric Properties of AlN Doped With Rare Earth Element Er |
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| TAI Zhiwei,YANG Chengtao,HU Xianwei,XIE Yiwei.The Piezoelectric Properties of AlN Doped With Rare Earth Element Er[J].Piezoelectrics & Acoustooptics,2018,40(6):822-824. |
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| Authors: | TAI Zhiwei YANG Chengtao HU Xianwei XIE Yiwei |
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| Institution: | (State Key Lab. of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) |
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| Abstract: | The crystal structure and piezoelectric properties of wurtzite AlN doped with different contents of Er were studied by using the first principles density functional theory in this paper.The calculation results show that ErxAl1-xN crystal cell parameters,crystal cell volume and bond length of the ErxAl1-xN crystalin crease significantly with the increase of the number of doped Er atoms from 0 to 25%,and the piezoelectric properties are also improved.When x = 25%, the piezoelectric constant d33 of ErxAl1 xN system is 8.67 pC/N,which is 79.5% higher than that of the pure AlN.The Er doped AlN provide us an alternative material for piezoelectric thin film in the future. |
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| Keywords: | Er doped AlN piezoelectric property crystal structure first principle doping modification |
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