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单晶SiC微纳米压痕的力学行为及仿真分析
引用本文:张银霞,郭世昌,郜伟,王栋,王健康.单晶SiC微纳米压痕的力学行为及仿真分析[J].压电与声光,2018,40(5):742-745.
作者姓名:张银霞  郭世昌  郜伟  王栋  王健康
作者单位:(郑州大学 机械工程学院,河南 郑州 450001)
基金项目:国家自然科学基金面上资助项目(51075125);中国博士后科学基金资助项目(2015M580635);河南省自然科学基金资助项目(162300410244)
摘    要:为了研究单晶SiC的微观力学性能和加工方式,开展了单晶6H SiC(0001)的微纳米压痕试验,并采用ABAQUS软件对纳米压痕过程进行了数值仿真及完成了试验验证。结果表明,单晶SiC在加载阶段的变形机理与压入载荷无关;硬度和弹性模量表现出了明显的尺寸效应;球形压头作用下的应力值最小,玻氏压头和维氏压头作用下的应力值相同,大于圆锥压头的应力值;压痕裂纹类型有主裂纹、侧向裂纹、主次型裂纹、平直型裂纹、间断型裂纹,裂纹的平均长度随着加载力的增加而逐渐增加。

关 键 词:单晶SiC  尺寸效应  压痕仿真  显微硬度  微裂纹

Mechanical Behavior and Simulation Analysis of Micro/nano Indentation of Single Crystal Silicon Carbide
ZHANG Yinxi,GUO Shichang,GAO Wei,WANG Dong,WANG Jiankang.Mechanical Behavior and Simulation Analysis of Micro/nano Indentation of Single Crystal Silicon Carbide[J].Piezoelectrics & Acoustooptics,2018,40(5):742-745.
Authors:ZHANG Yinxi  GUO Shichang  GAO Wei  WANG Dong  WANG Jiankang
Abstract:In order to study the micro mechanical properties and processing methods of single crystal silicon carbide (SiC),the micro and nano indentation experiment on the single crystal 6H SiC (0001) are carried out. The numerical simulation of nano indentation is completed by ABAQUS and the experimental verification is completed.The results show that during the loading stage the deformation mechanism of single crystal SiC has nothing to do with the indentation load,the hardness and elastic modulus show obvious size effect.The stress value under the action of spherical indenter is the minimum,and the stress value under the action of the Berkovich indenter and the Vickers indenter is the same,which is greater than the stress value of the Cone indenter.The types of indentation crack mainly include the main crack,lateral crack,primary and secondary cracks,straight crack and discontinuous crack. The average length of cracks increases with the increasing of loading force.
Keywords:single crystal silicon carbide(SiC)  size effect  indentation simulation  microhardness  microcrack
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