High brightness and reliable AlGaInP-based light-emitting diode for POF data links |
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| Authors: | AK Dutta K Ueda K Hara K Kobayashi |
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| Institution: | Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan; |
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| Abstract: | High brightness and reliability operation ring light-emitting diode (LED) is fabricated for plastic optical fiber (POF) link using the distributed Bragg reflector (DBR) mirror and antireflection (AR) coating. The ring LED exhibited optical output as high as 3.5 mW at the bias current of 100 mA. Furthermore, the projection lifetime is also estimated to be 1/spl times/10/sup 6/ h at a 35-mA data-link operating current and ambient temperature of 60/spl deg/C. |
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