Comparative Analysis of Temperature-dependent .Raman Spectra of GaN and GaN/Mg Films |
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Authors: | Wang Rui-min Chen Guang-de Lin J -Y and Jiang H -X |
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Institution: | (1) School of Science, Xi'an Jiaotong University, Xi'an, 710049, China;(2) Department of Physics, Kansas State University, KS, 60502, USA |
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Abstract: | The Raman spectra of unintentionally doped gallium nitride (GaN) and Mg-doped GaN films were investigated and compared at
room temperature and low temperature. The differences of E2 and A1(LO) mode in two samples are discussed. Stress relaxation is observed in Mg-doped GaN, and it is suggested that Mg-induced
misfit dislocation and electron–phonon interaction are the possible origins. A peak at 247 cm−1 is observed in both the Raman spectra of GaN and Mg-doped GaN. Temperature-dependent Raman scattering experiment of Mg-doped
GaN shows the frequency and intensity changes of this peak with temperature. This peak is attributed to the defect-induced
vibrational mode.
Translated from Chinese Journal of Semiconductors, 2005, 26(4) (in Chinese) |
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Keywords: | GaN P-type GaN Raman scattering defect modes |
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