Recent progress in single chip white light-emitting diodes with the InGaN underlying layer

Tremendous progress has been achieved in white light-emitting diodes (LEDs). To further improve the quality of white light and simplify the fabrication process, a single chip white-light LED with the InGaN underlying layer (UL) was studied and fabricated. The turn-on voltage of this type of LED was 2.7 V, and the spectrum at a forward bias current of 20 mA was comprised of blue (443 nm) and yellow (563 nm) lights. The intensity ratio of blue to yellow light was almost constant with the in- creasing injectio...