Nanoscale engineering of radiation tolerant silicon carbide |
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Authors: | Yanwen Zhang Manabu Ishimaru Tamas Varga Takuji Oda Chris Hardiman Haizhou Xue Yutai Katoh Steven Shannon William J Weber |
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Institution: | Materials Science & Technology Division, Oak Ridge National Laboratory, 4500S (A148), MS 6138, Oak Ridge, Tennessee 37831-6138, USA. Zhangy1@ornl.gov. |
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Abstract: | Radiation tolerance is determined by how effectively the microstructure can remove point defects produced by irradiation. Engineered nanocrystalline SiC with a high-density of stacking faults (SFs) has significantly enhanced recombination of interstitials and vacancies, leading to self-healing of irradiation-induced defects. While single crystal SiC readily undergoes an irradiation-induced crystalline to amorphous transformation at room temperature, the nano-engineered SiC with a high-density of SFs exhibits more than an order of magnitude increase in radiation resistance. Molecular dynamics simulations of collision cascades show that the nano-layered SFs lead to enhanced mobility of interstitial Si atoms. The remarkable radiation resistance in the nano-engineered SiC is attributed to the high-density of SFs within nano-sized grain structures that significantly enhance point defect annihilation. |
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