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Oxidation and annealing of thin FeTi layers covered with Pd
Authors:E. M. B. Heller   J. F. Suyver   A. M. Vredenberg  D. O. Boerma  
Affiliation:

a Debye Institute, Section Interface Physics, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht, Netherlands

b Department of Nuclear Solid State Physics, Materials Science Center, Groningen University, Nijenborgh 4, 9747 AG Groningen, Netherlands

Abstract:The hydrogen storage material FeTi has the disadvantage to lose its sorption capacity in contact with impurities such as O2 and H2O. A possibility to overcome this problem is to coat it with an anti-corrosive layer which is permeable for hydrogen. In this study we prepared FeTi layers covered with a (4 or 20 nm) thin Pd layer. We used ion beam and sputter profiling techniques, X-ray photoelectron spectrometry and scanning probe techniques to investigate the response of these bi-layers upon annealing up to 300°C in vacuum, air and 10−5 mbar O2. The layered structure remains intact up to 150°C. At 200°C in air and O2, Fe and (some) Ti move towards the Pd surface where they form oxide regions. At higher temperatures thicker oxide regions, presumably along the Pd grains, are formed. These processes are more pronounced for the case of 4 nm Pd. A model is presented to explain the observed phenomena. We conclude that up to 150°C 4 nm of Pd is sufficient to act as a protective layer. For a temperature of 200°C, 20 nm Pd may still provide sufficient protection against oxidation.
Keywords:FeTi   Pd   Oxidation   Thin films   Ion beam analysis   Energy storage
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