Preparation of a Novel COOH Ion Implantation Sensor and Its Application |
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| Authors: | Dong‐Mei GAO Dan‐Ling ZHAO Jing‐Bo HU Qi‐Long LI |
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| Affiliation: | 1. Department of Chemistry, Beijing Normal University, Beijing 100875, China;2. Fax: 0086‐010‐58802075;3. Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China |
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| Abstract: | A novel ion implantation sensor (DNA/COOH/ITO) based on DNA immobilization in COOH/ITO probe was manufactured for the first time. The surface morphologies of the electrodes were characterized by X‐ray photoelectron spectroscopy (XPS), field‐emission‐scanning electron microscopy (FSEM) and electrochemical methods. In a 0.5 mol/L PBS solution, a sensitive oxidation peak of DNA on the COOH/ITO electrode was obtained by voltammetry. The electrochemical behavior of DNA was studied. And the oxidative peak potential of DNA was +0.400 V (vs. Ag/AgCl). Its peak current was proportional to the concentration of DNA over the range of 1.0×10?8?1.0×10?6 mol/L with a detection limit of 5.0×10?9 mol/L (about 0.5 ng/mL). This sensor was applied to the direct detection of DNA samples. |
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| Keywords: | ion implantation chemical sensor ITO DNA cyclic voltammetry |
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