Hole intersubband transitions in GaAs/AlGaAs multiple quantum wells… A new method for determining the Luttinger parameters

Resonant electronic Raman scattering from photoexcited holes has been observed for multiple quantum wells (MQW's) grown in the 111]b and 100] directions. The measurements indicate that the heavy hole mass in the 111] direction is 0.75mo. This value is 2.2 times larger than the value characteristics of the 100] direction. The measurements also quantify the degree of anisotropy for the light holes. We propose a new set of Luttinger parameters that describe the anisotropy of the valence band in GaAs and are consistent with the interband and intersubband transitions observed in 100] and 111]b MQW's.