Effect of DC bias on microstructural rearrangement of a-SiN:H films on PET substrate |
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| Authors: | Bibhu P Swain Bhabani S Swain Nong M Hwang |
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| Institution: | aNational Research Laboratory of Charged Nanoparticles, Department of Materials Science and Engineering, Seoul National University, Seoul, South Korea |
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| Abstract: | Hydrogenated amorphous silicon nitride (a-SiN:H) films were deposited on flexible polyethylene terephthalate substrates at temperature as low as 100 °C by hot-wire chemical vapor deposition using SiH4, H2 and NH3 precursors. Field emission scanning emission microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy and small angle X-ray scattering were employed to study structural and microstructural properties of a-SiN:H films. The rms surface roughness increased with increase of positive bias to substrate. Intermediate range order, porosity and interface inhomogeneity in amorphous of a-SiN:H films evaluated by acoustic and optical phonon of silicon network, Guinier plot and correlated length from Raman and SAXS characterizations. The fractal behavior of a-SiN:H domains approached the perfect symmetry and the intermediate range order of a-SiN:H films deteriorate with increase of the positive substrate bias. Both correlation length and void size of the a-SiN:H amorphous domain increased with increase of the substrate bias from 0 to +200 V. |
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| Keywords: | a-SiN:H HWCVD SAXS Raman FESEM |
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