Calculated Electric Field Gradients and Electronic Properties of Acceptors in CdTe |
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Authors: | Lany S Ostheimer V Wolf H Wichert Th |
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Institution: | 1.Technische Physik, Universit?t des Saarlandes, D-66041, Saarbrücken, Germany ; |
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Abstract: | Linearised augmented plane wave (LAPW) calculations are performed in order to determine the electric field gradients (EFG)
induced by group V and group Ib acceptors in CdTe at the nearest neighbour (NN) atomic site. Experimentally, the EFG are measured
by the perturbed γγ-angular correlation spectroscopy using the radioactive probe isotopes 111In and 77Br. Besides the identification of the experimentally observed defects, the LAPW calculations provide information about fundamental
properties of the EFG. For the group Ib acceptors, the dependence of the EFG on the NN distance is opposite to the expectation
from the simple point charge model.
This revised version was published online in September 2006 with corrections to the Cover Date. |
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Keywords: | II– VI semiconductors EFG calculation PAC |
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