| 浮栅ROM集成电路空间低剂量率辐射失效时间预估 |
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| 引用本文： | 何宝平,郭红霞,龚建成,王桂珍,罗尹虹,李永宏. 浮栅ROM集成电路空间低剂量率辐射失效时间预估[J]. 物理学报, 2004, 53(9): 3125-3129 |
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| 作者姓名： | 何宝平 郭红霞 龚建成 王桂珍 罗尹虹 李永宏 |
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| 作者单位： | 西北核技术研究所，西安 710024 |
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| 基金项目： | 国家自然科学基金(批准号:40074032)资助的课题. |
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| 摘 要： | 利用60Coγ射线开展了浮栅ROM集成电路（AT29C256）总剂量辐照实验， 研究了集成 电路功耗电流和出错数在不同剂量率下的辐射响应；按照定义的失效标准和外推实验技术， 探索了集成电路参数失效与功能失效时间随辐射剂量率的变化关系；根据失效时间与辐射剂 量率的函数关系，预估了浮栅ROM集成电路AT29C256(9911)和AT29C256(9939)空间低剂量率辐射失效时间.关键词：低剂量率辐射损伤失效时间总剂量
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| 关 键 词： | 低剂量率 辐射损伤 失效时间 总剂量 |
| 文章编号： | 1000-3290/2004/53(09)/3125-05 |
| 收稿时间： | 2003-11-13 |
Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment |
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| He Bao-Ping,Guo Hong-Xi,Gong Jian-Cheng,Wang Gui-Zhen,Luo Yin-Hong and Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment[J]. Acta Physica Sinica, 2004, 53(9): 3125-3129 |
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| Authors: | He Bao-Ping Guo Hong-Xi Gong Jian-Cheng Wang Gui-Zhen Luo Yin-Hong Li Yong-Hong |
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| Abstract: | The experiments of ionizing radiation were performed on floating gate ROM device s by using 60Coγrays. The experimental aim was to examine the radi ation response at various dose rates. According to the extrapolation technique and the failu re criteria we defined,the parameter failure and function failure of devices vs. dose rate were studied. Finally, based on the function of failure timevs. doserate, the failure time of floating gate ROM device in space radiation environm ent was predicted. |
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| Keywords: | low dose rate radiation damage failure time total dose |
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